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�a(ch��n)Ʒ�N�:MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:SMD/SMT
���b / ���w:WSON-6
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:20 V
Id-�B�m(x��)©�O���:22 A
Rds On-©Դ��(d��o)ͨ���:15 mOhms
Vgs th-��Դ�O�ֵ늉�:1.1 V
Vgs - �ŘO-Դ�O늉�:10 V
Qg-�ŘO늺�:5.1 nC
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:2.5 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:NexFET
���b:Cut Tape
���b:MouseReel
���b:Reel
�߶�:0.75 mm
�L��:2 mm
ϵ��:CSD15571Q2
���w�����:1 N-Channel
����:2 mm
�̘�(bi��o):Texas Instruments
����猧(d��o) - ��Сֵ:25 S
�½��r(sh��)�g:4.1 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:17.2 ns
���S���b��(sh��)��:3000
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:9.9 ns
���ͽ�ͨ���t�r(sh��)�g:4.7 ns
�����:5.600 mg