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RQ5E035XNTCL PDF�Y��
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- �����̣�Rohm Semiconductor
- PDF�������1.47 Mbytes
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- �����������N�b�� N ͨ�� 30 V 3.5A��Ta�� 700mW��Ta�� TSMT3
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- Series-
- PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel?
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)30 V
- Current - Continuous Drain (Id) @ 25��C3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)4V, 10V
- Rds On (Max) @ Id, Vgs50mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs3.3 nC @ 5 V
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds180 pF @ 10 V
- FET Feature-
- Power Dissipation (Max)700mW (Ta)
- Operating Temperature150��C (TJ)
- Mounting TypeSurface Mount
- Supplier Device PackageTSMT3
- Package / CaseSC-96
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