�Y�x�Y(ji��)��������(y��ng)�̹������S�r��������(w��)
- ����(y��ng)��
- ��̖
- Ʒ��
- ���b
- ��̖
- ��攵(sh��)��
- ��ע
- ԃ�r
PSMN8R0-30YLC115 PDF�Y��
- �Y�����d
- �����̣�NXP USA Inc.
- PDF�ļ���С��539.63 Kbytes
- PDF�ļ�퓔�(sh��)����16�
- ������N-CHANNEL POWER MOSFET
PSMN8R0-30YLC115���g(sh��)Ҏ(gu��)��
- Series*
- PackageBulk
- FET Type-
- Technology-
- Drain to Source Voltage (Vdss)-
- Current - Continuous Drain (Id) @ 25��C-
- Drive Voltage (Max Rds On, Min Rds On)-
- Rds On (Max) @ Id, Vgs-
- Vgs(th) (Max) @ Id-
- Gate Charge (Qg) (Max) @ Vgs-
- Vgs (Max)-
- Input Capacitance (Ciss) (Max) @ Vds-
- FET Feature-
- Power Dissipation (Max)-
- Operating Temperature-
- Mounting Type-
- Supplier Device Package-
- Package / Case-
ُ�I����ԃ�a(ch��n)ƷՈ?zh��)ԃ�r��Ϣ��(3������������õ��؏�(f��))
PSMN8R0-30YLC115���P(gu��n)��̖