�Y�x�Y(ji��)��������(y��ng)�̹������S�r(sh��)��������(w��)
- ����(y��ng)��
- ��̖(h��o)
- Ʒ��
- ���b
- ��̖(h��o)
- ��攵(sh��)��
- ��ע
- ԃ�r(ji��)
-
��̖(h��o)о������̄�(w��)�����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A��(qi��ng)��·1019̖(h��o)�A��(qi��ng)�V��(ch��ng)D��23��11016516
-
-
-
-
�����ջ�
PMPB16R5XNEX PDF�Y��
- �Y�����d
- �����̣�Nexperia USA Inc.
- PDF�������313.59 Kbytes
- PDF�ļ�퓔�(sh��)����15�
- ������PMPB16R5XNE - 30 V, N-CHANNEL TR
PMPB16R5XNEX���g(sh��)Ҏ(gu��)��
- SeriesTrenchMOS?
- PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel?
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)30 V
- Current - Continuous Drain (Id) @ 25��C7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
- Rds On (Max) @ Id, Vgs19mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250��A
- Gate Charge (Qg) (Max) @ Vgs18 nC @ 4.5 V
- Vgs (Max)��12V
- Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 15 V
- FET Feature-
- Power Dissipation (Max)1.7W (Ta), 12.5W (Tc)
- Operating Temperature-55��C ~ 150��C (TJ)
- Mounting TypeSurface Mount
- Supplier Device PackageDFN2020M-6
- Package / Case6-UDFN Exposed Pad
ُ(g��u)�I����ԃ�a(ch��n)ƷՈ(q��ng)?zh��)ԃ�r(ji��)��Ϣ��(3������������õ��؏�(f��))
PMPB16R5XNEX���P(gu��n)��̖(h��o)