�Y�x�Y(ji��)��������(y��ng)�̹������S�r(sh��)��������(w��)
- ����(y��ng)��
- ��̖
- Ʒ��
- ���b
- ��̖
- ��攵(sh��)��
- ��ע
- ԃ�r(ji��)
-
��̖о������̄�(w��)�����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A��(qi��ng)��·1019̖�A��(qi��ng)�V��D��23��11016516
-
-
-
-
�����ջ�
PESD3V3U1UT PDF�Y��
- �Y�����d
- �����̣�PHILIPS[NXP Semiconductors]
- PDF�������104.14 Kbytes
- PDF�ļ�퓔�(sh��)����13�
- ������Ultra low capacitance ESD protection diode in SOT23 package
PESD3V3U1UT���g(sh��)Ҏ(gu��)��
- ���O����ͣ�:Bidirectional TVS
- Clamping Voltage Vc Max��:20V
- Diode Case Style��:SOT-23
- No. of Pins��:3
- MSL��:-
- SVHC��:No SVHC (20-Jun-2013)
- ����늉���:6.4V
- Breakdown Voltage Max��:6.9V
- Breakdown Voltage Min��:5.8V
- Breakdown Voltage Range��:5.8V to 6.9V
- Breakover Voltage Min��:5.8V
- Capacitance Cd @ Vr Max��:1.5pF
- Capacitance Cd @ Vr Typ��:0.6pF
- Clamping Voltage @ 8/20��s Max��:20V
- ���O�����ã�:Unidirectional
- Operating Temperature Max��:150��C
- Operating Temperature Min��:-65��C
- �����ضȷ�����:-65��C to +150��C
- ���b��:Cut Tape
- Peak Pulse Current Ippm��:5A
- Peak Pulse Power��:80W
- Reverse Stand-Off Voltage Vrwm��:3.3V
- SMD Marking��:AP
- Stand-off Voltage��:3.3V
- TVS Polarity��:Unidirectional
- �˽���ͣ�:SMD
- Weight (kg)��0.00001
- Tariff No.��85411000
ُ�I����ԃ�a(ch��n)ƷՈ?zh��)ԃ�r(ji��)��Ϣ��(3������������õ��؏�(f��))
PESD3V3U1UT���P(gu��n)��̖