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PDTC143ZU PDF�Y��
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- �����̣�PHILIPS[NXP Semiconductors]
- PDF�������93.66 Kbytes
- PDF��(y��)��(sh��)����14�(y��)
- ������NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW
PDTC143ZU���g(sh��)Ҏ(gu��)��
- ���ã�Single
- ���γߴ磺2.2 x 1.35 x 1mm
- ���ߣ�1mm
- �L(zh��ng)�ȣ�2.2mm
- ���늘O�l(f��)��O�늉���0.1 V
- ���늘O�l(f��)��O늉���50 V
- ����B�m(x��)��늘O�����100 mA
- �����ذl(f��)��O늉���10 V
- ��߹����ضȣ�+150 ��C
- ��Сֱ��������棺100
- ������ضȣ�-65 ��C
- ���b��ͣ�Surface Mount
- ���b��ͣ�UMT
- ���_��(sh��)��3
- ���w����ͣ�NPN
- ����ݔ����裺4.7 k��
- ������������ʣ�0.1
- ���ȣ�1.35mm
- ���w�ܘO�ԣ�:NPN
- Collector Emitter Voltage V(br)ceo��:50V
- Transition Frequency ft��:230MHz
- ���ģ�:200mW
- DC Collector Current��:100mA
- DC Current Gain hFE��:100
- Operating Temperature Min��:-65��C
- Operating Temperature Max��:150��C
- Transistor Case Style��:SOT-323
- No. of Pins��:3
- MSL��:-
- SVHC��:No SVHC (20-Jun-2013)
- Collector Emitter Voltage Vces��:100mV
- �B�m(x��)��늘O���Ic���:100mA
- Current Ic Continuous a Max��:100mA
- Current Ic hFE��:10mA
- Full Power Rating Temperature��:25��C
- Hfe Min��:100
- �����ضȷ�����:-65��C to +150��C
- Power Dissipation Ptot Max��:200mW
- Resistance R1��:4.7kohm
- Resistance R2��:47kohm
- Voltage Vcbo��:50V
- Weight (kg)��0.000006
- Tariff No.��85412900
- associated��RE901
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