�Y�x�Y(ji��)��������(y��ng)�̹������S�r(sh��)��������(w��)
- ����(y��ng)��
- ��̖(h��o)
- Ʒ��
- ���b
- ��̖(h��o)
- ��(k��)�攵(sh��)��
- ��ע
- ԃ�r(ji��)
-
��̖(h��o)о������̄�(w��)�����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A��(qi��ng)��·1019̖(h��o)�A��(qi��ng)�V��(ch��ng)D��23��11016516
-
-
-
-
�����ջ�
-
������о����댧(d��o)�w����˾
10��
13267088774(��̖ͬ(h��o))Sam�����и���^(q��)�A��(qi��ng)�������1̖(h��o)��10A8240���I(y��ng)Ʒ�ƣ�TI/���݃x����ST/�ⷨ��MICROCHIP/о��ADI/�����Z��ALLEGRO/��������NXP/��������ON/��ɭ����RENESAS/���_��ROHM/�_ķ��ALTERA/����������CYPRESS/ِ����˹��INFINEON/Ӣ�w�衢ISS01011808
-
MMBZ33VCL,215
- NXP Semiconductors��
- ��
- 19+��
- 5660��
- ֻ��ԭ�b��
-


MMBZ33VCL PDF�Y��
- �Y�����d
- �����̣�NXP[NXP Semiconductors]
- PDF�������79.47 Kbytes
- PDF��(y��)��(sh��)����15�(y��)
- ������Double ESD protection diodes for transient overvoltage suppression
MMBZ33VCL���g(sh��)Ҏ(gu��)��
- Reverse Stand-Off Voltage Vrwm��:26V
- Breakdown Voltage Min��:31.35V
- Breakdown Voltage Max��:34.65V
- Clamping Voltage Vc Max��:46V
- Peak Pulse Current Ippm��:870mA
- Diode Case Style��:SOT-23
- No. of Pins��:3
- ���ģ�:350mW
- MSL��:MSL 1 - Unlimited
- SVHC��:No SVHC (20-Jun-2013)
- Breakdown Voltage Range��:31.35V to 34.65V
- ���O�����ã�:Common Cathode
- ���b��:Cut Tape
- Weight (kg)��0.000008
- Tariff No.��85411000
ُ(g��u)�I����ԃ�a(ch��n)ƷՈ(q��ng)?zh��)ԃ�r(ji��)��Ϣ��(3������������õ��؏�(f��))
MMBZ33VCL���P(gu��n)��̖(h��o)