�Y�x�Y(ji��)��������(y��ng)�̹������S�r(sh��)��������(w��)
- ����(y��ng)��
- ��̖(h��o)
- Ʒ��
- ���b
- ��̖(h��o)
- ��(k��)�攵(sh��)��
- ��ע
- ԃ(x��n)�r(ji��)
-
��̖(h��o)о������̄�(w��)�����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A��(qi��ng)��·1019̖(h��o)�A��(qi��ng)�V��(ch��ng)D��23��11016516
IRF7410TRPBF.
���
ֱͨ܇(ch��)
-
-
-
-
�����ջ�
IRF7410TRPBF-1 PDF�Y��
- �Y�����d
- �����̣�Infineon Technologies
- PDF�������195.75 Kbytes
- PDF��(y��)��(sh��)����10�(y��)
- ������MOSFET P-CH 12V 16A 8SO
IRF7410TRPBF-1���g(sh��)Ҏ(gu��)��
- SeriesHEXFET?
- PackageTape & Reel (TR)
- FET TypeP-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)12 V
- Current - Continuous Drain (Id) @ 25��C16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)-
- Rds On (Max) @ Id, Vgs7mOhm @ 16A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250��A
- Gate Charge (Qg) (Max) @ Vgs91 nC @ 4.5 V
- Vgs (Max)��8V
- Input Capacitance (Ciss) (Max) @ Vds8676 pF @ 10 V
- FET Feature-
- Power Dissipation (Max)2.5W (Ta)
- Operating Temperature-55��C ~ 150��C (TJ)
- Mounting TypeSurface Mount
- Supplier Device Package8-SO
- Package / Case8-SOIC (0.154", 3.90mm Width)
ُ(g��u)�I(m��i)����ԃ(x��n)�a(ch��n)ƷՈ(q��ng)?zh��)�?xi��)ԃ(x��n)�r(ji��)��Ϣ��(3������������õ��؏�(f��))
IRF7410TRPBF.���P(gu��n)��̖(h��o)