�Y�x�Y(ji��)��������(y��ng)�̹������S�r��������(w��)
- ����(y��ng)��
- ��̖
- Ʒ��
- ���b
- ��̖
- ��攵(sh��)��
- ��ע
- ԃ�r
-
������о����댧(d��o)�w����˾
10��
13267088774(��̖ͬ)Sam�����и���^(q��)�A���������1̖��10A8240���IƷ�ƣ�TI/���݃x����ST/�ⷨ��MICROCHIP/о��ADI/�����Z��ALLEGRO/��������NXP/��������ON/��ɭ����RENESAS/���_��ROHM/�_ķ��ALTERA/����������CYPRESS/ِ����˹��INFINEON/Ӣ�w����ISS01011808
-
IRF640PBF.
- VISHY��
- �L����ُ��
- 18+��
- 6520��
- ԭ�b��Ʒ��
-
IRF640S PDF�Y��
- �Y�����d
- �����̣�PHILIPS[NXP Semiconductors]
- PDF�ļ�������95.09 Kbytes
- PDF�ļ�퓔�(sh��)����9�
- ������N-channel TrenchMOS transistor
IRF640PBF-BE3���g(sh��)Ҏ(gu��)��
- Series-
- PackageTube
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)200 V
- Current - Continuous Drain (Id) @ 25��C18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)10V
- Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id4V @ 250��A
- Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
- FET Feature-
- Power Dissipation (Max)125W (Tc)
- Operating Temperature-55��C ~ 150��C (TJ)
- Mounting TypeThrough Hole
- Supplier Device PackageTO-220AB
- Package / CaseTO-220-3
ُ�I����ԃ�a(ch��n)ƷՈ?zh��)ԃ�r��Ϣ��(3������������õ��؏�(f��))
IRF640PBF(CN)���P(gu��n)��̖
![P(gun)]](/imgs/dlgclose.gif "P(gun)]")
