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- �����̣�Infineon Technologies
- PDF�������1.55 Mbytes
- PDF�ļ�퓔�(sh��)����14�
- ������MOSFET N-CH 650V 32A TO247-3-41
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- SeriesAutomotive, AEC-Q101, CoolMOS? CFD7A
- PackageTube
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)650 V
- Current - Continuous Drain (Id) @ 25��C32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)10V
- Rds On (Max) @ Id, Vgs75mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id4.5V @ 820��A
- Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds3288 pF @ 400 V
- FET Feature-
- Power Dissipation (Max)171W (Tc)
- Operating Temperature-40��C ~ 150��C (TJ)
- Mounting TypeThrough Hole
- Supplier Device PackagePG-TO247-3-41
- Package / CaseTO-247-3
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