�Y�x�Y(ji��)��������(y��ng)�̹������S�r(sh��)��������(w��)
- ����(y��ng)��
- ��̖
- Ʒ��
- ���b
- ��̖
- ��攵(sh��)��
- ��ע
- ԃ�r(ji��)
-
��̖о������̄�(w��)�����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A��(qi��ng)��·1019̖�A��(qi��ng)�V��D��23��11016516
IPP65R190CFD(SP000881160)
���
ֱͨ܇
-
-
-
-
�����ջ�
-
������о����댧(d��o)�w����˾
10��
13267088774(��̖ͬ)Sam�����и���^(q��)�A��(qi��ng)�������1̖��10A8240���IƷ�ƣ�TI/���݃x����ST/�ⷨ��MICROCHIP/о��ADI/�����Z��ALLEGRO/��������NXP/��������ON/��ɭ����RENESAS/���_��ROHM/�_ķ��ALTERA/����������CYPRESS/ِ����˹��INFINEON/Ӣ�w�衢ISS01011808
-
IPP65R190CFD(SP000881160)
- INFINEON��
- ��
- 18+��
- 6520��
- ԭ�b��Ʒ��
-


IPP65R190CFD7A PDF�Y��
- �Y�����d
- �����̣�INFINEON[Infineon Technologies AG]
- PDF�������1738.7 Kbytes
- PDF�ļ�퓔�(sh��)����14�
- ������650V CoolMOSa CFD7A SJ Power Device
IPP65R190CFD7XKSA1���g(sh��)Ҏ(gu��)��
- SeriesCoolMOS? CFD7
- PackageTube
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)650 V
- Current - Continuous Drain (Id) @ 25��C17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)10V
- Rds On (Max) @ Id, Vgs190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id4.5V @ 700��A
- Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds1850 pF @ 100 V
- FET Feature-
- Power Dissipation (Max)151W (Tc)
- Operating Temperature-55��C ~ 150��C (TJ)
- Mounting TypeThrough Hole
- Supplier Device PackagePG-TO220-3
- Package / CaseTO-220-3
ُ�I����ԃ�a(ch��n)ƷՈ?zh��)ԃ�r(ji��)��Ϣ��(3������������õ��؏�(f��))
IPP65R190CFD(SP000881160)���P(gu��n)��̖