�Y�x�Y(ji��)���������̹������S�r��������
- ������
- ��̖
- Ʒ��
- ���b
- ��̖
- ��攵(sh��)��
- ��ע
- ԃ�r
-
��̖о������̄գ����ڣ�����˾
13��
0755-8366305618922805453��18929374037��18922803401�B0755-82537787�����и���^(q��)�A����·1019̖�A���V��D��23��11016516
IPP100N06S3L-04(3PN06L04)
���
ֱͨ܇
-
-
-
-
�����ջ�
IPP100N08N3 PDF�Y��
- �Y�����d
- �����̣�ISC[Inchange Semiconductor Company Limited]
- PDF�ļ���С��338.57 Kbytes
- PDF�ļ�퓔�(sh��)����2�
- ������isc N-Channel MOSFET Transistor
IPP100N06S3L-04IN���g(sh��)Ҏ(gu��)��
- Series*
- PackageBulk
- FET Type-
- Technology-
- Drain to Source Voltage (Vdss)-
- Current - Continuous Drain (Id) @ 25��C-
- Drive Voltage (Max Rds On, Min Rds On)-
- Rds On (Max) @ Id, Vgs-
- Vgs(th) (Max) @ Id-
- Gate Charge (Qg) (Max) @ Vgs-
- Vgs (Max)-
- Input Capacitance (Ciss) (Max) @ Vds-
- FET Feature-
- Power Dissipation (Max)-
- Operating Temperature-
- Mounting Type-
- Supplier Device Package-
- Package / Case-
ُ�I����ԃ�a(ch��n)ƷՈ?zh��)ԃ�r��Ϣ��(3������������õ��؏�)
IPP100N06S3L-04(3PN06L04)���P(gu��n)��̖