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IPD50P04P413ATMA2 PDF�Y��
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- �����̣�Infineon Technologies
- PDF�������413.42 Kbytes
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- ������MOSFET P-CH 40V 50A TO252-3
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- SeriesOptiMOS?-P2
- PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel?
- FET TypeP-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)40 V
- Current - Continuous Drain (Id) @ 25��C50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)10V
- Rds On (Max) @ Id, Vgs12.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id4V @ 85��A
- Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds3670 pF @ 25 V
- FET Feature-
- Power Dissipation (Max)58W (Tc)
- Operating Temperature-55��C ~ 175��C (TJ)
- Mounting TypeSurface Mount
- Supplier Device PackagePG-TO252-3-313
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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