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BSP295 PDF�Y��
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- �����̣�SIEMENS[Siemens Semiconductor Group]
- PDF�������180.33 Kbytes
- PDF��(y��)��(sh��)����9�(y��)
- ������SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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- ���b/�⚤��PG-SOT223-4
- ���b�L(f��ng)��SMD/SMT
- ͨ����(sh��)����1Channel
- ���w�ܘO�ԣ�N-Channel
- Vds-©Դ�O����늉���60V
- Id-�B�m(x��)©�O�����1.8A
- Rds On-©Դ��(d��o)ͨ��裺500mOhms
- Vgs - �ŘO-Դ�O늉���20V
- ��С�����ضȣ�-55C
- ������ضȣ�+150C
- ���ã�SingleDualDrain
- Pd-���ʺ�ɢ��1.8W
- ͨ��ģʽ��Enhancement
- �Y��AEC-Q101
- �߶ȣ�1.6mm
- �L(zh��ng)�ȣ�6.5mm
- ���w���(l��i)�ͣ�1N-Channel
- ���ȣ�3.5mm
- �½��r(sh��)�g��9.9ns
- �����r(sh��)�g��9.9ns
- �����P(gu��n)�]���t�r(sh��)�g��27ns
- ���ͽ�ͨ���t�r(sh��)�g��5.4ns
- Packing Type��TAPE & REEL
- Moisture Level��1
- RDS (on) max��300.0m?
- IDpuls max��7.2A
- VDS max��60.0V
- ID max��1.8 A
- Package��SOT-223
- QG��14.0nC
- Budgetary Price ?�/1k��0.24
- RDS (on) (@4.5V) max��500.0m?
- Operating Temperature min��-55.0��C
- Ptot max��1.8W
- Polarity��N
- Pin Count��4.0Pins
- VGS(th) min max��0.8 V 2.0 V
- Mounting��SMD
- Mode��Enhancement
- Coss��95.0 pF
- Ciss��295.0 pF
- �o(w��)�U��r/RoHs���o(w��)�U/����RoHs
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