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- �����̣�INFINEON[Infineon Technologies AG]
- PDF�ļ�������750.42 Kbytes
- PDF�ļ�퓔�(sh��)����10�
- ������Advanced Process Technology
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- SeriesAutomotive, AEC-Q101, HEXFET?
- PackageBulk
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)100 V
- Current - Continuous Drain (Id) @ 25��C180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)10V
- Rds On (Max) @ Id, Vgs4.7mOhm @ 106A, 10V
- Vgs(th) (Max) @ Id4V @ 250��A
- Gate Charge (Qg) (Max) @ Vgs215 nC @ 10 V
- Vgs (Max)��8V
- Input Capacitance (Ciss) (Max) @ Vds9.575 pF @ 50 V
- FET Feature-
- Power Dissipation (Max)375W (Tc)
- Operating Temperature-55��C ~ 175��C (TJ)
- Mounting TypeThrough Hole
- Supplier Device PackageTO-262
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
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