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- �����̣�International Rectifier
- PDF�������672.51 Kbytes
- PDF�ļ�퓔�(sh��)����10�
- ������MOSFET N-CH 100V 120A D2PAK
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- SeriesAutomotive, AEC-Q101, HEXFET?
- PackageBulk
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)100 V
- Current - Continuous Drain (Id) @ 25��C120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)-
- Rds On (Max) @ Id, Vgs6mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 150��A
- Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds6860 pF @ 50 V
- FET Feature-
- Power Dissipation (Max)250W (Tc)
- Operating Temperature-55��C ~ 175��C (TJ)
- Mounting TypeSurface Mount
- Supplier Device PackageD2PAK
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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