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- �����̣�NXP[NXP Semiconductors]
- PDF�ļ�������94.25 Kbytes
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- ������N-channel TrenchMOS FET
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- Series-
- PackageTape & Reel (TR)
- FET TypeN-Channel
- TechnologyMOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)60 V
- Current - Continuous Drain (Id) @ 25��C115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)5V, 10V
- Rds On (Max) @ Id, Vgs3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id2V @ 250��A
- Gate Charge (Qg) (Max) @ Vgs-
- Vgs (Max)��20V
- Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
- FET Feature-
- Power Dissipation (Max)225mW (Ta)
- Operating Temperature-55��C ~ 150��C (TJ)
- Mounting TypeSurface Mount
- Supplier Device PackageSOT-23
- Package / CaseTO-236-3, SC-59, SOT-23-3
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